Triode/MOS tube/transistor/module

This N-channel MOSFET is designed to improve the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or traditional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching and body diode reverse recovery performance.

Silicon carbide MOS, high frequency and high power applications, low loss

Configuration Dual Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -36 VGS(th)(v) -0.8 RDS(ON)(m?)@4.182V 11 Qg(nC) @4.5V - QgS(nC) 3.5 Qgd(nC) 5.6 Ciss(pF) 2565 Coss(pF) 260 Crss(pF) 240

DTA113ZUA-F2-0000HF

N-channel, 60V/20A, 37 milliohms.

N-channel, 75V, 130A, 7.8mΩ@10V

P-channel, -100V, -23A, 117mΩ@-10V

N-channel, 85V, 210A, 3.8mΩ@10V