Triode/MOS tube/transistor/module
LRC (Leshan Radio)
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Crystal Conductor Microelectronics
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onsemi (Ansemi)
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This high voltage PNP bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
TECH PUBLIC (Taizhou)
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CRMICRO (China Resources Micro)
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DIODES (US and Taiwan)
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ElecSuper (Jingxin Micro)
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Polarity NPN Dissipated power (W) 0.3 Maximum collector current (mA) 500 Collector- base voltage (V) 80 Saturation voltage drop (V) 0.25 Collector/ base current (mA) 100/10 Maximum operating frequency (MHz) 100
Descripción
HUAYI (Hua Yi Wei)
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APM (Jonway Microelectronics)
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APEC (Fuding)
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WEIDA (Weida)
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minos (Minos)
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APM (Jonway Microelectronics)
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ST (STMicroelectronics)
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VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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NPN,Vceo=305V,Ic=200mA
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Gem-micro (crystal group)
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VISHAY (Vishay)
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VBsemi (Wei Bi)
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