Triode/MOS tube/transistor/module
MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 5.7/7.5 Continuous Drain Current ID (A) 40
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
APM (Jonway Microelectronics)
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XCH (Xu Changhui)
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HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N-channel, VDSS withstand voltage 20V, ID current 150A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.0V,
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 60V, 0.2A, 6Ω@4.5V
Descripción
Pre-biased NPN, Vceo=50V, Ic=100mA
Descripción
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=2.2K R2=47K
Descripción
China Resources Huajing
Fabricantes
N-channel 200V 9A
Descripción
YANGJIE (Yang Jie)
Fabricantes
YONGYUTAI (Yongyutai)
Fabricantes
JJW (Jiejiewei)
Fabricantes
Bidirectional 8A, 600V, same as BTA08-600.
Descripción
onsemi (Ansemi)
Fabricantes
Wayon (Shanghai Wei'an)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes