Triode/MOS tube/transistor/module

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic, Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic, Vce): 120@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Environmental friendly

Type N VDS(V) 60V VGS(V) ±20V Vth(V) 1.6V RDS(ON)(mΩ) 36mΩ ID(A) 6A

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

N-channel, 100V, 180A, 4.5mΩ@10V