Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
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LONTEN (Longteng Semiconductor)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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TWGMC (Taiwan Dijia)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V
Descripción
PSI (Baolixin)
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ST (STMicroelectronics)
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LRC (Leshan Radio)
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YANGJIE (Yang Jie)
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NCE (Wuxi New Clean Energy)
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VBsemi (Wei Bi)
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Convert Semiconductor
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High Diode (Hyde)
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P-channel, -30V, -4.2A, 65mΩ@-10V
Descripción
Infineon (Infineon)
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VBsemi (Wei Bi)
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AGM-Semi (core control source)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 3/3.8 Continuous Drain Current ID (A) 120
Descripción