Triode/MOS tube/transistor/module
TOSHIBA (Toshiba)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N+N channel, VDSS withstand voltage 40V, ID current 8A, RDON on-resistance 22mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,
Descripción
ST (STMicroelectronics)
Fabricantes
NPN Planar Transistor 6A 100V TO-220 Thick Chip
Descripción
CRMICRO (China Resources Micro)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TI (Texas Instruments)
Fabricantes
U-NIK (Xu Kang)
Fabricantes
P-channel, -20V, -3.5A
Descripción
Slkor (Sakor Micro)
Fabricantes
HRmicro (Huarui Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Hottech (Heketai)
Fabricantes
L:100-200 stalls
Descripción
Wuxi Unisplendour
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
DIODES (US and Taiwan)
Fabricantes
N-channel, 40V, 16.8A, 7.3mΩ@10V
Descripción