Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
N-channel 60V
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
P-channel, -20V, -2.6A, 97mΩ@4.5V
Descripción
YANGJIE (Yang Jie)
Fabricantes
CBI (Creation Foundation)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 30V, 0.6A, 0.7Ω@4.5V
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
NPN,Vceo=80V,Ic=500mA
Descripción
AGM-Semi (core control source)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 60A Power (Pd): 60W On-resistance (RDS(on)@Vgs,Id: 7.2mΩ@10V, 20A Threshold voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 32nC@10V Input capacitance (Ciss@Vds): 2.497nF@30V, Vds=30v Id=60A Rds=7.2mΩ, operating temperature : -55℃~+150℃@(Tj)
Descripción
LRC (Leshan Radio)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P-channel, -30V, -5.6A, 46mΩ@-10V
Descripción
PUOLOP (Dipu)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes