Triode/MOS tube/transistor/module

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

NPN, Vceo=50V, Ic=3A

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 150mΩ@-10V, -2A threshold voltage Vgs(th)@Id): -1.0V to -2.5V@250uA

RF application, N channel, 30V, 1A

ransistors, NPN 180V 600mA 300mW HFE=100～300, SOT-23