Triode/MOS tube/transistor/module
Slkor (Sakor Micro)
Fabricantes
Type N VDSS(V) 20 ID@TC=38?C(A) 5 PD@TC=38?C(W) 1.25 VGS(V) ±8 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.18V 25
Descripción
YFW (You Feng Wei)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Jingyang Electronics
Fabricantes
Type(N)/ESD(N)/VDS60(V)/VGS20(±V)/VGS(th)1.0-2.5(V)/ID3(A)
Descripción
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 36 VGS(th)(v) 1.5 RDS(ON)(m?)@4.357V 25 Qg(nC)@4.5V 7 QgS(nC) 1.3 Qgd(nC) 2.4 Ciss(pF) 530 Coss(pF) 65 Crss(pF) 50
Descripción
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
N-channel, 60V, 3A, 85mΩ@10V
Descripción
AGM-Semi (core control source)
Fabricantes
Techcode (TED)
Fabricantes
Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 4.2 Input Capacitance (Ciss) 4100 Reverse Transfer Capacitance Crss (pF) 13 Gate Charge (Qg) 52
Descripción
AGM-Semi (core control source)
Fabricantes