Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
P-channel, -30V, -1.1A
Descripción
APM (Jonway Microelectronics)
Fabricantes
FOSAN (Fuxin)
Fabricantes
onsemi (Ansemi)
Fabricantes
Techcode (TED)
Fabricantes
Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 8.78 On-Resistance (mΩ) 13.5 Input Capacitance (Ciss) 1440 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 28
Descripción
Sinopower (large and medium)
Fabricantes
Sinopower (large and medium)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
WILLSEMI (Will)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LGE (Lu Guang)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes