Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
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NCE (Wuxi New Clean Energy)
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MSKSEMI (Mesenco)
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One-way thyristor ITRMS 0.8A withstand voltage 400V Igt=30~80(uA) pin KAG 100-6
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
Polarity NPN Dissipated Power (W) 0.35 Maximum Collector Current (mA) 300 Collector- Base Voltage (V) 300 Saturation Voltage Drop (V) 0.2 Collector/ Base Current (mA) 44612 Maximum Working Frequency (MHz) 50
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-50V, Ic=-100mA
Descripción
DC (Dongchen)
Fabricantes
LONTEN (Longteng Semiconductor)
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LRC (Leshan Radio)
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Wuxi Unisplendour
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onsemi (Ansemi)
Fabricantes
This P-channel 2.5V specified MOSFET is a robust gate version of the advanced PowerTrench process. It is optimized for power management applications with wide gate drive voltage ratings (2.5V – 8V).
Descripción
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
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VISHAY (Vishay)
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SINO-IC (Coslight Core)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
Fabricantes
This Darlington bipolar power transistor is suitable for general purpose amplifiers and low frequency switching applications. TIP140, TIP141, TIP142 (NPN); TIP145, TIP146, TIP147 (PNP) are complementary devices.
Descripción
DIODES (US and Taiwan)
Fabricantes