Triode/MOS tube/transistor/module
LGE (Lu Guang)
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Infineon (Infineon)
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ST (STMicroelectronics)
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PJSEMI (flat crystal micro)
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MOS@@continuous drain current (Id) (at 25°C): -0.8A, drain-source voltage (Vdss): -20V, gate-source threshold voltage: 0.75V(Typ.)@ 250uA, drain-source conduction Resistance: 180mΩ(Typ.) @Vgs=4.5V, 260mΩ(typ.) @Vgs=2.5V ,Maximum Power Dissipation (Ta=25°C): 0.35W, Type: 0.8A/20V Nch
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SPTECH (Shenzhen Quality Super)
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NPN 50W 700V 8A Applications: Designed for horizontal deflection circuits in TVs and monitors
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Ultra high voltage MOS tube
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APEC (Fuding)
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P groove -30V -75A
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HUASHUO (Huashuo)
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VISHAY (Vishay)
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LRC (Leshan Radio)
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Infineon (Infineon)
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GL (Optics Lei)
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LRC (Leshan Radio)
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onsemi (Ansemi)
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onsemi (Ansemi)
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TMC (Taiwan Mao)
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CRMICRO (China Resources Micro)
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