Triode/MOS tube/transistor/module
HUAYI (Hua Yi Wei)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-Channel Power Trench MOSFET 40V, 50A, 8.7mΩ
Descripción
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 7.2 VGS(th)(v) 0.6 RDS(ON)(m?)@4.117V 16 Qg(nC)@ 4.5V 13 QgS(nC) 1.5 Qgd(nC) 1.8 Ciss(pF) 610 Coss(pF) 140 Crss(pF) 130
Descripción
onsemi (Ansemi)
Fabricantes
XDM (Xin Da Mao)
Fabricantes
VDMOS single tube
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
P channel -20V -0.66A
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor Transistor Field Effect Transistor MOS tube, TO-220F, N channel, withstand voltage: 450V, current: 13A, 10V internal resistance (Max): 0.46Ω, power: 40W
Descripción
LRC (Leshan Radio)
Fabricantes
NPN transistor, HFE:300-600, 100mA Vce=45V
Descripción