Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
MOSFETN-CH30V46A8DFN
Descripción
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Printed on P66
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 150V, 33A, 42mΩ@10V
Descripción
China Resources Huajing
Fabricantes
NPN, Vceo=400V, Ic=2A
Descripción
P-channel, -100V, -25A, 150mΩ@-10V
Descripción
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 160@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
NPN 117W 60V 10A Applications: Designed for general purpose switching and amplifier applications
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
NPN, Vceo=60V, IC=3A, PD=25W
Descripción
HT (Golden Honor)
Fabricantes
Gear: 200-400
Descripción
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 100V, 50A, 0.0089Ω@10V
Descripción