Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 101A Power (Pd): 28W On-Resistance (RDS(on)@Vgs,Id: 2.3mΩ@10V, 20A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 13.5nC@10V Input capacitance (Ciss@Vds): 0.842nF@20V, Vds=40v Id=101A Rds=2.3mΩ, working Temperature: -55℃~+150℃@(Tj)

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P channel

N-channel 100V 1.9A

N-channel, 60V, 12A, 9.4mΩ@10V

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of the SuperFET FRFET MOSFET can eliminate additional components and improve system reliability.