Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
JJW (Jiejiewei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel 650V 10A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
Infineon (Infineon)
Fabricantes
Sinopower (large and medium)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 800V, 5.4A, 2Ω@10V
Descripción
LRC (Leshan Radio)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220, N-channel, 200V, 130A, 15mΩ (Max), 430W
Descripción
TOSHIBA (Toshiba)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 18/23 Continuous Drain Current ID (A) 50
Descripción
TECH PUBLIC (Taizhou)
Fabricantes