Triode/MOS tube/transistor/module

Drain-source voltage (Vdss): 500V Continuous drain current (Id): 20A MOS tube

N-channel, 20V, 30A, <13mΩ@Vgs=10V

N-channel, 600V, 0.41?@10V, 16A

Polarity PNP Power Dissipation (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 50 Saturation Voltage Drop (V) 0.7 Collector/ Base Current (mA) 500/55 Maximum operating frequency (MHz) 100

The HGT1S10N120BNST is based on a No Through Punch (NPT) IGBT design. This IGBT is suitable for a variety of high voltage switching applications operating at medium frequencies where low conduction losses are critical, such as UPS, solar inverters, motor control and power supplies.