Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 30V, 3.3A, 60mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=50V, Ic=3A, hfe=100~200
Descripción
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
Descripción
APM (Jonway Microelectronics)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Convert Semiconductor
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
Descripción
PNP, Vceo=-45V, Ic=-100mA, hFE:220~475
Descripción
TI (Texas Instruments)
Fabricantes
CSD19505KCS 80V, N-Channel NexFET Power MOSFET, CSD19505KCS
Descripción
VBsemi (Wei Bi)
Fabricantes
XCH (Xu Changhui)
Fabricantes
VISHAY (Vishay)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes