Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
SHIKUES (Shike)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SPS (American source core)
Fabricantes
YFW (You Feng Wei)
Fabricantes
ST (STMicroelectronics)
Fabricantes
APEC (Fuding)
Fabricantes
N-channel 150V 11.2A
Descripción
PANJIT (Qiangmao)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
MOS tube type: N-channel drain-source voltage (Vdss): 30V Continuous drain current (Id): 5.8A Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 35mΩ@10V,5.8 A Nch, 30V, 5.8A, 35mΩ@10V
Descripción
JUNSHINE (Junshine Technology)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel 400V 25A 170mΩ@13A
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
onsemi (Ansemi)
Fabricantes
Power MOSFET, 500 mA, 60 V, N-Channel, SOT?23
Descripción