Triode/MOS tube/transistor/module

Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 100mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 8Ω@4V,10mA

N-channel, Vds=30V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 170A Power (Pd): 250W On-Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 73nC@10V Input Capacitance (Ciss@Vds): 4.14nF@20V Operating Temperature: -55℃~+150℃@(Tj )

18A 200V

60A 60V

9A 200V

50A 250V

100A 30V

15A 100V

15A 100V

200A 80V