Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 5.8/7.5 Continuous Drain Current ID (A) 90
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS tube, DFN-8 5*6, N channel, withstand voltage: 30V, current: 90A
Descripción
ST (STMicroelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Wuxi Unisplendour
Fabricantes
Infineon (Infineon)
Fabricantes
STANSON (Statson)
Fabricantes
Type N VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS97°C(A) 18 RDS(Max) 100 PD97°C(W) 80
Descripción
GOFORD (valley peak)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
NPN, Vceo=25V, IC=1.5A, PD=0.35W
Descripción