Triode/MOS tube/transistor/module

MOS, DFN-8 3.3*3.3, P-channel, -20V, -80A, 6.6mΩ (Max), 65W

NPN,Vceo=120V,Ic=800mA

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N-channel, 100V, 9.2A, 270mΩ@10V

DTC114YE-F2-0000HF

P-channel, 20V, 12A, 8mΩ@4.5V

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.

NPN, Vceo=160V, Ic=300mA