Triode/MOS tube/transistor/module
Drain-Source Voltage (Vdss): 60V/-45V Continuous Drain Current (Id): 5A/-3.5A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
N-channel, 600V, 76A
Descripción
VISHAY (Vishay)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
HUAKE (Huake)
Fabricantes
onsemi (Ansemi)
Fabricantes
This dual NPN PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.
Descripción
N-channel 600V 3A
Descripción
onsemi (Ansemi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
N-channel, 75V, 150A, 2.6mΩ@10V
Descripción