Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
AGM-Semi (core control source)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 13A Power (Pd): 33W On-Resistance (RDS(on)@Vgs,Id): 315mΩ@10V,6A Threshold Voltage ( Vgs(th)@Id): 1.9V@250uA Gate charge (Qg@Vgs): 33nC@10V Input capacitance (Ciss@Vds): 1.734nF@50V, Vds=100V Id=13A Rds=315mΩ, operating temperature: -55℃~+150℃@(Tj)
Descripción
VBsemi (Wei Bi)
Fabricantes
SPS (American source core)
Fabricantes
HX (Hengjiaxing)
Fabricantes
NPN,50V,2A,hfe=180~450
Descripción
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-100V, Ic=-1A
Descripción
APM (Jonway Microelectronics)
Fabricantes
Wuxi Unisplendour
Fabricantes
High Voltage Super Junction MOSFET
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
Infineon (Infineon)
Fabricantes
MOS full bridge, 20V/5.7A(-20V/-4.7A)
Descripción
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Sinopower (large and medium)
Fabricantes
MICRONE (Nanjing Weimeng)
Fabricantes
N-channel, 20V, 5A
Descripción