Triode/MOS tube/transistor/module
Ascend (Ansend)
Fabricantes
TI (Texas Instruments)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
onsemi (Ansemi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
P-channel, 40V, 70A.
Descripción
ETERNAL (Yiyuan Technology)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 80V, 100A, 5.7mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Ultra high voltage MOS tube
Descripción
VISHAY (Vishay)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
onsemi (Ansemi)
Fabricantes
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs that offer superior SCIS functionality in the space-saving D-Pak (TO-252), as well as industry-standard D?-Pak (TO-263), TO-262 and TO-220 plastic encapsulation. This device is suitable for use in automotive ignition circuits, especially as a coil driver. Internal diodes provide voltage clamping without external components. EcoSPARK devices can be customized for specific clamping voltages. For more information, please contact the nearest ON Semiconductor sales office. The previous development type was 49362.
Descripción