Triode/MOS tube/transistor/module
CRMICRO (China Resources Micro)
Fabricantes
Welding machine UPS power supply Vces=600V Ic=40A Ptot=336W Vce=1.90V Half-current freewheeling diode TO-3P replaces Silan SGT40N60F\\BT40T60ANFK\\Megnachip; fully compatible with BT60T60ANFK C2764976
Descripción
AnBon (AnBon)
Fabricantes
N-channel, 650V, 12A, 0.85Ω@10V
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 100V, 73A, 14mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
Fabricantes
YFW (You Feng Wei)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 60V Collector current (Ic): 600mA Power (Pd): 1W, DC current gain (hFE@Ic,Vce): 100~300@150mA, 10V , characteristic frequency (fT): 200MHz, working temperature: -55℃~+150℃@(Tj)
Descripción
Infineon (Infineon)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
VISHAY (Vishay)
Fabricantes
P-channel 60V 110A
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -65 VGS(th)(v) -1.6 RDS(ON)(m?)@4.420V 12.5 Qg(nC) @4.5V 33 QgS(nC) 10.7 Qgd(nC) 12.8 Ciss(pF) 3448 Coss(pF) 508 Crss(pF) 421
Descripción
Infineon (Infineon)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
N-channel 80V 130A
Descripción
ST (STMicroelectronics)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 75 VGS(th)(v) 1.5 RDS(ON)(m?)@4.192V 11 Qg(nC)@4.5V 12.6 QgS(nC) 4.2 Qgd(nC) 5.1 Ciss(pF) 1317 Coss(pF) 163 Crss(pF) 131
Descripción
NPN, Vcc=50V, Ic=100mA
Descripción
JJW (Jiejiewei)
Fabricantes
VISHAY (Vishay)
Fabricantes