Triode/MOS tube/transistor/module
N-channel, 650V, 4.5A, 2.4Ω@10V
Descripción
STANSON (Statson)
Fabricantes
Type P VDSS(V) 40 VGS(V) 20 VTH(V) 0.8 IDS84°C(A) 12 RDS(Max) 52 PD84°C(W) 50
Descripción
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD87384M Synchronous Buck NexFET Power Block, CSD87384M
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-50V, Ic=150mA, hfe=200~400, silk screen BA
Descripción
GOFORD (valley peak)
Fabricantes
P tube, -20V, -3A, open -0.7V, 64mΩ(typ)@-4.5V
Descripción
Hottech (Heketai)
Fabricantes
DOWO (Dongwo)
Fabricantes
VISHAY (Vishay)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WPMtek (Wei Panwei)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 80A Power (Pd): 65W On-resistance (RDS(on)Max@Vgs,Id): 5mΩ@10V, 20A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 60V 130A
Descripción