Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
Fabricantes
WEIDA (Weida)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
P channel -30V -4.1A
Descripción
BORN (Born Semiconductor)
Fabricantes
transistors,NPN 40V 200mA 200mW,SOT-23
Descripción
DIODES (US and Taiwan)
Fabricantes
P channel -20V -3.4A
Descripción
AnBon (AnBon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
SALLTECH (Sari)
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
JJW (Jiejiewei)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
LRC (Leshan Radio)
Fabricantes
N-channel, 20V, 14A, 10.5mΩ@4.5V
Descripción
ST (STMicroelectronics)
Fabricantes
LRC (Leshan Radio)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for general purpose amplifier applications. This device features SC-75 encapsulation for low power surface mount applications where board space is at a premium.
Descripción