Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
Descripción
onsemi (Ansemi)
Fabricantes
Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protected, SC-75
Descripción
onsemi (Ansemi)
Fabricantes
N-Channel, PowerTrench MOSFET, 60V, 80A, 6mΩ, this latest shielded gate PowerTrench MOSFET has smaller QSYNC, excellent soft reverse recovery intrinsic body diode performance, fast switching speed, which can greatly improve the energy efficiency of synchronous rectification .
Descripción
Samwin (Semipower)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
LGE (Lu Guang)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 200V, 15A, 150mΩ@10V
Descripción
Hottech (Heketai)
Fabricantes
ETERNAL (Yiyuan Technology)
Fabricantes
N-channel, 60V, 54A, 11mΩ@10V
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
baocheng (Baocheng)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP, 40V, 0.1A, DFN1006-3
Descripción