Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
These devices feature high current gain and low saturation voltage with up to 3 A of continuous collector current.
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
BORN (Born Semiconductor)
Fabricantes
ransistors, NPN 70V 600mA 250mW HFE=100~300, SOT-23
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJS8205A-F2-0000HF
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 0.8-1.4 On-Resistance RDS(ON) (mΩ) 75/90 Continuous Drain Current ID (A) 3
Descripción
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
The NTMFS4C024N is a 30 V, 78 A, single N-channel power MOSFET.
Descripción
Infineon (Infineon)
Fabricantes
Prisemi (core guide)
Fabricantes
MICROCHIP (US Microchip)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
NPN Vceo=100V Ic=6A PC=2W
Descripción
Slkor (Sakor Micro)
Fabricantes