Triode/MOS tube/transistor/module

Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 50 Saturation Voltage Drop (V) 0.7 Collector/ Base Current (mA) 500/51 Maximum operating frequency (MHz) 100

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@150mA, 2V Characteristic frequency (fT): 100MHz

NPN, Vceo=25V, Ic=1.5mA, hfe=160~300

On-state input voltage (VI(on)@Vce,Ic): 3V@2V, 300mA Collector-emitter saturation voltage drop (VCE(sat)@Ii,Ic): 900mV On-state input current (Ii@Vi): 930uA@ 3.85V

N-channel, 650V, 13A, 0.65Ω(max)@10V

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 2 RDS(ON)(m?)@4.396V 24 Qg(nC)@4.5V - QgS(nC) 8 Qgd(nC) 10 Ciss(pF) 2450 Coss(pF) 150 Crss(pF) 85

This P-channel MOSFET is produced using advanced PowerTrench technology. This very high-density process is uniquely suited to minimize on-resistance and is optimized for excellent switching performance.