Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
N-channel MOSFET. VDS=100V, ID=120A, 6.8mR, can replace IRF2807, IRF3710, IRF4410
Descripción
WEIDA (Weida)
Fabricantes
ST (STMicroelectronics)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P-channel, -100V, -18A, 167mΩ@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Dual NPN, Vceo=50V, Ic=150mA
Descripción
MSKSEMI (Mesenco)
Fabricantes
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 150 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 3 RDS(ON)(m?)@4.225V - Qg(nC)@4.5V - QgS(nC) 26 Qgd(nC) 18 Ciss(pF) 5450 Coss(pF) 1730 Crss(pF) 195
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.
Descripción
AGM-Semi (core control source)
Fabricantes
Infineon (Infineon)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
N-channel, 85V, 90A
Descripción