Triode/MOS tube/transistor/module
FIRST (Foster)
Fabricantes
N-channel, 600V, 4A, 2.4Ω(max)@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SPS (American source core)
Fabricantes
Infineon (Infineon)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
N-channel Drain-source voltage (Vdss): 85V Continuous drain current (Id): 185A Power (Pd): 208.3W On-resistance (RDS(on)Max@Vgs,Id): 4mΩ@10V, 50A
Descripción
Infineon (Infineon)
Fabricantes
JJW (Jiejiewei)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -3.2A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@-4.5 V,-3A Threshold voltage Vgs(th)@Id): -0.3V to -1.2V@250uA
Descripción
WILLSEMI (Will)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=50V, Ic=150mA, hfe=200~400
Descripción
VBsemi (Wei Bi)
Fabricantes
N-channel, 60V, 75A, 6mΩ@10V
Descripción
Wuxi Unisplendour
Fabricantes
kwansemi (Guanyu)
Fabricantes
N-channel, 500V, 18A, 320mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes