Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=50V, Ic=150mA, hfe=120~240, silk screen LY
Descripción
onsemi (Ansemi)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
P groove -20V -5.5A
Descripción
DIODES (US and Taiwan)
Fabricantes
LRC (Leshan Radio)
Fabricantes
ST (STMicroelectronics)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@4.5V, 3A threshold voltage Vgs(th)@Id): -0.3V to -1.1V@250uA
Descripción
Wuxi Unisplendour
Fabricantes
SHIKUES (Shike)
Fabricantes
GL (Optics Lei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TOSHIBA (Toshiba)
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UMW (Friends Taiwan Semiconductor)
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RealChip (Shenxin Semiconductor)
Fabricantes
WEIDA (Weida)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes