Triode/MOS tube/transistor/module
Daxin (Daxin)
Fabricantes
1200v/150a 2.3Vce
Descripción
VBsemi (Wei Bi)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ISC (Wuxi Solid Electric)
Fabricantes
YFW (You Feng Wei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 2.4/3 Continuous Drain Current ID (A) 150
Descripción
TMC (Taiwan Mao)
Fabricantes
Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.6V RDS(ON)(mΩ) 7mΩ ID(A) 80A
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 600V, 26A, 125mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
These families of plastic NPN and PNP power transistors are used in applications such as switching regulators, converters, and power amplifiers as general-purpose power amplification and switching, such as output and driver stages.
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 240V, 110mA, 14Ω@10V
Descripción
LGE (Lu Guang)
Fabricantes
onsemi (Ansemi)
Fabricantes