Triode/MOS tube/transistor/module

PNP, Vceo=-50V, Ic=-50mA

Semiconductor transistor field effect transistor MOS tube, DFN-8 5*6, double N, withstand voltage: 100V, current: 40A, 10V internal resistance (Max): 0.019Ω, 4.5V internal resistance (Max): 0.028Ω, power: 60W

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V

Type: P-channel Drain-source voltage (Vdss): 12V Continuous drain current (Id): 4.1A Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 90mΩ@1.8V,2A

N-channel, 20V, 1A, 200mΩ@4.5V

NPN Vceo=50V, Ic=100mA, hfe=100-600