Triode/MOS tube/transistor/module
YANGJIE (Yang Jie)
Fabricantes
VBsemi (Wei Bi)
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Convert Semiconductor
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APEC (Fuding)
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onsemi (Ansemi)
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NPN, Vceo=100V, Ic=8A
Descripción
BORN (Born Semiconductor)
Fabricantes
VBsemi (Wei Bi)
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N-channel, 20V, 12A, 12mΩ@10V
Descripción
LRC (Leshan Radio)
Fabricantes
AGM-Semi (core control source)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 7
Descripción
Infineon (Infineon)
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VBsemi (Wei Bi)
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Hottech (Heketai)
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Infineon (Infineon)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±12 Vth(V) 0.5-1.3 On-Resistance RDS(ON) (mΩ) 45/55 Continuous Drain Current ID (A) 4.2
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
STANSON (Statson)
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Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS45°C(A) 5 RDS(Max) 185 PD45°C(W) 1.25
Descripción
TECH PUBLIC (Taizhou)
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ST (STMicroelectronics)
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Crystal Conductor Microelectronics
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