Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 15A Power (Pd): 46W On-Resistance (RDS(on)@Vgs,Id): 85mΩ@ 10V, 15A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 19nC@10V Input Capacitance (Ciss@Vds): 0.635nF@50V , Vds=100V Id=15A Rds =85mΩ, working temperature: -55℃~+150℃@(Tj)

BC817-16,215 - Single Transistor Bipolar, General Purpose, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE

NPN,32V,4A

N-CH

Type PNP IC(A) -0.5 VCBO(V) -80 VCEO(V) -80 VEBO(V) -4 VCE(sat)(V) -0.25

NPN, Vceo=40V, Ic=600mA, silk screen: 1P

NPN 80V 1A