Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 6A Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 27mΩ@ 4.5V,3A

Power MOSFET and Schottky Diode 30 V, 4.6 A, ?Cool N-Channel with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN encapsulation

NPN, Vceo=25V, Ic=700mA, hfe=200~320, silk screen DV4

Dual MOS, N-channel, 30V 9A

Type(P)/ESD(N)/VDS-30(V)/VGS12(±V)/VGS(th)-1.6(V)/ID-4.3(A)

N-channel, 30V, 16A, 6mΩ@10V

Applications: communication modules, industrial control, artificial intelligence, consumer electronics

MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.5-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 30