Triode/MOS tube/transistor/module

NPN, Vceo=40V, Ic=600mA, silk screen 2X

N channel

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N-channel, 30V, 10A, 13.5mΩ@10V

N-channel, 525V, 4.4A, 1.5Ω@10V