Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N-channel, VDSS withstand voltage 40V, ID current 50A, RDON on-resistance 7mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,
Descripción
Convert Semiconductor
Fabricantes
Crystal Conductor Microelectronics
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=32V, Ic=1A
Descripción
Infineon (Infineon)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 200V, current: 40A, 10V internal resistance (Max): 0.065Ω, power: 160W
Descripción
VBsemi (Wei Bi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel 40V 80A
Descripción
P-channel, 20V, 4.5A, 33mΩ@4.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
PNP, Vceo=-400V, Ic=-300A
Descripción