Triode/MOS tube/transistor/module
GOFORD (valley peak)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 700V, 6.0A, 1.35~10V
Descripción
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for audio amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.
Descripción
N-channel, 60V, 0.3A, 7.5Ω@10V
Descripción
PANJIT (Qiangmao)
Fabricantes
Infineon (Infineon)
Fabricantes
STANSON (Statson)
Fabricantes
Type P VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS51°C(A) 0.8 RDS(Max) 700 PD51°C(W) 1.25
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 650V, 11.4A, 310mΩ@10V
Descripción
VISHAY (Vishay)
Fabricantes
Wuxi Unisplendour
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
Wuxi Unisplendour
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD16556Q5B 25V NexFET N-Channel Power MosFET
Descripción
Infineon (Infineon)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
onsemi (Ansemi)
Fabricantes
This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
Descripción