Triode/MOS tube/transistor/module

N-channel 200V 34A

N-channel, 650V, 7A, 0.6Ω@10V

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.

NPN, Vceo=300V, Ic=500mA

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 100@10mA,1V

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MOS tube type: 2 N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.8Ω@10V ,300mA