Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, maximum current 6.3A@VGS=4.5V, VDS=20V
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
P-channel, -30V, -0.76A, 600mΩ@-10V
Descripción
Littelfuse (American Littelfuse)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
NIKO-SEM (Nickerson)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 340mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 900mΩ@10V,500mA
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
MICROCHIP (US Microchip)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): -20V Continuous drain current (Id): -3A Power (Pd): 1.56W On-resistance (RDS(on)
Descripción
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
Vceo=-50V, Ic=-0.15A
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes