Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
N-channel, 60V, 380mA, 2Ω@4.5V
Descripción
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-25V, Ic=-1.5A, hfe=160~300
Descripción
CBI (Creation Foundation)
Fabricantes
Crystal Conductor Microelectronics
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJG25GP10A-F1-0100HF
Descripción
FUXINSEMI (Fuxin Senmei)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 600V, 2A, 4.4Ω@10V
Descripción
MATSUKI (pine wood)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 30V, 22A, 1.9mΩ@10V
Descripción
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Dual NPN, Vceo=50V, Ic=200mA
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type P-Ch VDS(V) -30 VGS(V) 25 ID(A)Max. -40 VGS(th)(v) -1.6 RDS(ON)(m?)@4.417V 20 Qg(nC) @4.5V 11 QgS(nC) 5 Qgd(nC) 5 Ciss(pF) 1256 Coss(pF) 187 Crss(pF) 115
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 650V, 24.3A, 160mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes