Triode/MOS tube/transistor/module
LRC (Leshan Radio)
Fabricantes
onsemi (Ansemi)
Fabricantes
2SC3649 is a bipolar transistor, 160V, 1.5A, low VCE(sat), (PNP)NPN single PCP, for high voltage switching applications.
Descripción
SPS (American source core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel 85V 140A
Descripción
UMW (Friends Taiwan Semiconductor)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 30V, 100mA
Descripción
CBI (Creation Foundation)
Fabricantes
KODENSHI AUK (Photonics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
REASUNOS (Ruisen Semiconductor)
Fabricantes
N-channel, 30V, 150A, 1.7mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.
Descripción
VBsemi (Wei Bi)
Fabricantes