Triode/MOS tube/transistor/module
PNP, Vceo=-25V, Ic=-1.5A, hfe=160~300
Descripción
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
GOFORD (valley peak)
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TMC (Taiwan Mao)
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MICROCHIP (US Microchip)
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Infineon (Infineon)
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APM (Jonway Microelectronics)
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Infineon (Infineon)
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onsemi (Ansemi)
Fabricantes
SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SUPERFET III MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation with a small height (1mm high) and small footprint (8 * 8 mm2). The SUPERFET III MOSFETs within the Power88 encapsulation provide superior switching performance with lower parasitic power supply inductance and separated power and drive sources. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).
Descripción
TOSHIBA (Toshiba)
Fabricantes
Hongjia Orange
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CRMICRO (China Resources Micro)
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PJSEMI (flat crystal micro)
Fabricantes
N-channel 20V 4.5A
Descripción
Applications: communication modules, industrial control, artificial intelligence, consumer electronics
Descripción
PANASONIC (Panasonic)
Fabricantes
Dual N-channel 20V 7A
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes