Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-300V, Ic=-0.2A
Descripción
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.45-0.95 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 2
Descripción
N-channel, 600V, 7A, 1Ω@10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
P-channel, VDSS withstand voltage 60V, ID current 20A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,
Descripción
CXW (Chengxinwei)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 60V, 8A, 24mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
N-channel, 60V, 8A, 24mΩ@10V
Descripción
APM (Jonway Microelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 20V, 12A, 10mΩ@10V
Descripción
SILAN (Silan Micro)
Fabricantes
N-channel, 600V 30mA
Descripción
SPS (American source core)
Fabricantes
LRC (Leshan Radio)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
N-channel, 40V, 110A, 2.4mΩ@10V
Descripción
N-channel, 650V, 1.9?@10V, 4.0A
Descripción