Triode/MOS tube/transistor/module

Polarity NPN Dissipated Power (W) 0.2 Maximum Collector Current (mA) 200 Collector- Base Voltage (V) 60 Saturation Voltage Drop (V) 0.3 Collector/ Base Current (mA) 18384 Maximum Working Frequency (MHz) 300

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -19.8 VGS(th)(v) -1.8 RDS(ON)(m?)@4.445V 15 Qg( nC)@4.5V 8 QgS(nC) 2 Qgd(nC) 4 Ciss(pF) 750 Coss(pF) 142 Crss(pF) 102

NPN

N-channel 400V 6A

N-channel 30V 60A

Dual NMOS 60V 340mA RDS(on)=5Ω WITH ESD SOT-363

P-channel, 30V, 15A, 7.2mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 30A On-resistance (RDS(on)@Vgs,Id): 30mΩ@10V, 38mΩ@4.5V Threshold voltage (Vgs(th )@Id): 1.2V-2.5@250μA