Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, 100V, 0.8A, E-Line
Descripción
SPS (American source core)
Fabricantes
FOSAN (Fuxin)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN,Vceo=25V,Ic=0.5A
Descripción
VBsemi (Wei Bi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
HUAKE (Huake)
Fabricantes
KY (Han Kyung Won)
Fabricantes
Ascend (Ansend)
Fabricantes
60V N+P Complementary MOS tube
Descripción
Infineon (Infineon)
Fabricantes
P-channel, 20V, 630mA, 550mΩ@4.5V
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 55V, 30A, 24.5mΩ@10V
Descripción
Infineon (Infineon)
Fabricantes
minos (Minos)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.
Descripción